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HANBit
HMD8M32M16
32Mbyte(8Mx32) 72-pin F/P Mode 2K Ref. SIMM Design 5V Part No. HMD8M32M16, HMD8M32M16G GENERAL DESCRIPTION
The HMD8M32M16 is a 8M x 32 bit dynamic RAM high density memory module. The module consists of sixteen CMOS 4M x 4bit DRAMs in 24-pin SOJ packages mounted on a 72-pin, double-sided, FR-4-printed circuit board. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM components. The module is a single In-line Memory Module with edge connections and is intended for mounting in to 72-pin edge connector sockets. All module components may be powered from a single 5V DC power supply and all inputs and outputs are TTL-compatible.
FEATURES
w Part Identification HMD8M32M16--2048 Cycles/32ms Ref, Solder HMD8M32M16G--2048 Cycles/32ms Ref, Gold w Access times : 50, 60ns w High-density 32MByte design w Single + 5V 0.5V power supply w JEDEC standard pinout w FP(Fast Page) mode operation w TTL compatible inputs and outputs w FR4-PCB design
PIN SYMBOL PIN
PIN ASSIGNMENT
SYMBOL PIN SYMBOL PIN SYMBOL
1 2 3 4 5 6 7 8 9 10
Vss DQ0 DQ16 DQ1 DQ17 DQ2 DQ18 DQ3 DQ19 Vcc NC A0 A1 A2 A3 A4 A5 A6
19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36
A10 DQ4 DQ20 DQ5 DQ21 DQ6 DQ22 DQ7 DQ23 A7 NC(A11) Vcc A8 A9 /RAS1 /RAS0 NC NC
37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 54
NC NC Vss /CAS0 /CAS2 /CAS3 /CAS1 /RAS0 /RAS1 NC /W NC DQ8 DQ24 DQ9 DQ25 DQ10 DQ26
55 56 57 58 59 60 61 62 63 64 65 66 67 68 69 70 71 72
DQ11 DQ27 DQ12 DQ28 Vcc DQ29 DQ13 DQ30 DQ14 DQ31 DQ15 NC PD1 PD2 PD3 PD4 NC Vss
OPTIONS
w Timing 50ns access 60ns access w Packages 72-pin SIMM
MARKING
-5 -6 M
11 12 13 14 15 16 17 18
PERFORMANCE RANGE
SPEED -5 -6 tRAC 50ns 60ns tCAC 13ns 15ns tRC 90ns 110ns tPC 35ns 40ns
SIMM TOP VIEW
Note: A11 is not used for HMD8M32M16
PIN NAMES
Pin Name A0-A10 A0-A11 DQ0-DQ31 /W Function Address Input(2K Ref) Address Input(4K Ref) Data In/Out Read/Write Input Pin Name /RAS0, /RAS1 /CAS0 - /CAS3 PD1 - PD4 Function Row Address Strobe Column Address Strobe Presence Detect Pin Name Vss NC Vcc Function Ground No Connection Power(+5V)
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FUNCTIONAL BLOCK DIAGRAM
/CAS0
HMD8M32M16
/RAS0
/CAS DQ1 /RAS DQ2 U0 /OE DQ3 /W A0-A10(A11). DQ4
DQ1 DQ2 DQ3 DQ4
U8
/CAS /RAS /OE /W
/RAS1
A0-A10(A11)
/CAS DQ1 /RAS DQ2 U1 /OE DQ3 /W A0-A10(A11). DQ4
/CAS1
DQ1 DQ2 DQ3 DQ4
U9
/CAS /RAS /OE /W
A0-A10(A11)
/CAS DQ1 U2 /RAS DQ2 /OE DQ3 /W A0-A10(A11). DQ4
DQ1 DQ2 DQ3 DQ4
U10
/CAS /RAS /OE /W
A0-A10(A11)
/CAS DQ1 /RAS DQ2 U3 /OE DQ3 /W A0-A10(A11). DQ4
/CAS2
DQ1 DQ2 DQ3 DQ4
U11
/CAS /RAS /OE /W
A0-A10(A11)
/CAS DQ1 U4 /RAS DQ2 /OE DQ3 /W A0-A10(A11). DQ4
DQ1 DQ2 DQ3 DQ4
U12
/CAS /RAS /OE /W
A0-A10(A11)
/CAS DQ1 /RAS DQ2 U5 /OE DQ3 /W A0-A10(A11). DQ4
/CAS3
DQ1 DQ2 DQ3 DQ4
U13
/CAS /RAS /OE /W
A0-A10(A11)
/CAS DQ1 U6 /RAS DQ2 /OE DQ3 /W A0-A10(A11). DQ4
DQ1 DQ2 DQ3 DQ4
U14
/CAS /RAS /OE /W
A0-A10(A11)
/CAS DQ1 U7 /RAS DQ2 /OE DQ3 /W A0-A10(A11). DQ4
/W A0-A10 (A11)
DQ1 DQ2 DQ3 DQ4
/CAS /RAS /OE A0-A10(A11) /W
U15
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ABSOLUTE MAXIMUM RATINGS
PARAMETER Voltage on Any Pin Relative to Vss Voltage on Vcc Supply Relative to Vss Power Dissipation Storage Temperature SYMBOL VIN ,OUT Vcc PD TSTG
HMD8M32M16
RATING -1V to 7.0V -1V to 7.0V 16W -55oC to 150oC
Short Circuit Output Current IOS 50mA w Permanent device damage may occur if " Absolute Maximum Ratings" are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
RECOMMENDED DC OPERATING CONDITIONS
( Voltage reference to VSS, TA=0 to 70 o C ) PARAMETER Supply Voltage Ground Input High Voltage Input Low Voltage SYMBOL Vcc Vss VIH VIL MIN 4.5 0 2.4 -1.0 TYP. 5.0 0 MAX 5.5 0 Vcc+1 0.8 UNIT V V V V
DC AND OPERATING CHARACTERISTICS
SYMBOL ICC1 -6 ICC2 -5 ICC3 -6 -5 ICC4 -6 ICC5 -5 ICC6 -6 Il(L) IO(L) VOH VOL ICC2 : Standby Current ( /RAS=/CAS=VIH ) ICC3 : /RAS Only Refresh Current * ( /CAS=V IH, /RAS, Address cycling @tRC=min )
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SPEED -5
MIN -80 -80 2.4 -
MAX 1760 1600 32 1760 1600 1440 1280 16 1760 1600 80 80 0.4
UNITS mA mA mA mA mA mA mA mA mA mA A A V V
ICC1 : Operating Current * (/RAS , /CAS , Address cycling @tRC=min.)
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ICC4 : Fast Page Mode Current * (/RAS=VIL, /CAS, Address cycling @tPC=min ) ICC5 : Standby Current (/RAS=/CAS=Vcc-0.2V ) ICC6 : /CAS-Before-/RAS Refresh Current * (/RAS and /CAS cycling @t RC=min ) IIL : Input Leakage Current (Any input 0V VIN 6.5V, all other pins not under test = 0V) IOL : Output Leakage Current (Data out is disabled, 0V VOUT 5.5V VOH : Output High Voltage Level (IOH= -5mA ) VOL : Output Low Voltage Level (IOL = 4.2mA )
HMD8M32M16
* NOTE: ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open. ICC is specified as an average current. In ICC1 and ICC3, address cad be changed maximum once while /RAS=VIL. In ICC4, address can be changed maximum once within one page mode cycle.
CAPACITANCE
( TA=25 C, Vcc = 5V, f = 1Mz ) SYMBOL CIN1 C IN2 CIN3 CIN4 CDQ1 MIN MAX 80 112 112 112 112 UNITS pF pF pF pF pF
o
DESCRIPTION Input Capacitance (A0-A10) Input Capacitance (/W) Input Capacitance (/RAS0) Input Capacitance (/CAS0-/CAS3) Input/Output Capacitance (DQ0-31)
AC CHARACTERISTICS
( 0 C TA 70oC , Vcc = 5V10%, See notes 1,2.) -5 -6 UNIT MIN MAX MIN 110 50 13 25 3 3 2 30 50 13 60 15 20 15 5 10K 45 30 10K 13 50 3 3 2 30 60 15 70 20 20 15 5 10K 50 35 10K 15 50 60 15 30 MAX ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns 90
o
PARAMETER Random read or write cycle time Access time from /RAS Access time from /CAS Access time from column address /CAS to output in Low-Z Output buffer turn-off delay Transition time (rise and fall) /RAS precharge time /RAS pulse width /RAS hold time /CAS hold time /CAS pulse width /RAS to /CAS delay time /RAS to column address delay time /CAS to /RAS precharge time
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SYMBOL tRC tRAC tCAC tAA tCLZ tOFF tT tRP tRAS tRSH tCSH tCAS tRCD tRAD tCRP
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Row address set-up time Row address hold time Column address set-up time Column address hold time Column address hold referenced to /RAS Column Address to /RAS lead time Read command set-up time Read command hold referenced to /CAS Read command hold referenced to /RAS Write command hold time Write command hold referenced to /RAS Write command pulse width Write command to /RAS lead time Write command to /CAS lead time Data-in set-up time Data-in hold time Data-in hold referenced to /RAS Refresh period Write command set-up time /CAS setup time (C-B-R refresh) /CAS hold time (C-B-R refresh) /RAS precharge to /CAS hold time Access time from /CAS precharge Fast page mode cycle time /CAS precharge time (Fast page) /RAS pulse width (Fast page ) /W to /RAS precharge time (C-B-R refresh) /W to /RAS hold time (C-B-R refresh) /CAS precharge(C-B-R counter test) NOTES tASR tRAH tASC tCAH tAR tRAL tRCS tRCH tRRH tWCH tWCR tWP tRWL tCWL tDS tDH tDHR tREF tWCS tCSR tCHR tRPC tCPA tPC tCP tRASP tWRP tWRH tCPT 40 10 60 10 10 20 100K 0 10 15 5 35 0 10 0 15 50 30 0 0 0 15 50 15 15 15 0 15 50 16
HMD8M32M16
0 10 0 15 55 35 0 0 0 15 55 15 20 20 0 15 55 16 0 10 15 5 40 45 10 70 10 10 30 100K ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns ns
1.An initial pause of 200s is required after power-up followed by any 8 /RAS-only or /CAS-before-/RAS refresh cycles
before proper device operation is achieved.
2.VIH (min) and VIL (max) are reference levels for measuring timing of input signals. Transition times are measured between
VIH(min) and VIL(max) and are assumed to be 5ns for all inputs.
3.Measured with a load equivalent to 1TTL loads and 100pF 4.Operation within the tRCD(max) limit insures that tRAC(max) can be met. tRCD(max) is specified as a reference point only. If tRCD
is greater than the specified tRCD(max) limit, then access time is controlled exclusively by t CAC.
5.Assumes that tRCD tRCD(max)
6. tAR, tWCR, tDHR are referenced to tRAD(max) 7.This parameter defines the time at which the output achieves the open circuit condition and is not referenced to V OH
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or VOL. 8. tWCS, tRWD, tCWD and tAWD are non restrictive operating parameter.
HMD8M32M16
They are included in the data sheet as electrical characteristic only. If t WCS tWCS(min) the cycle is an early write cycle and the data out pin will remain high impedance for the duration of the cycle. 9. Either tRCH or tRRH must be satisfied for a read cycle. 10. These parameters are referenced to the /CAS leading edge in early write cycles and to the /W leading edge in readwrite cycles. 11. Operation within the tRAD(max) limit insures that tRAC(max) can be met. tRAD(max) is specified as a reference point only. If tRAD is greater than the specified tRAD(max) limit. then access time is controlled by tAA.
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TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE
HMD8M32M16
/RAS
VIHVILtCRP tRCD tRAD tASR tRAH tASC
tRC tRAS tCSH tRSH tCAS tCAH
COLUMN ADDRESS
tRP
tCRP
/CAS
VIHVIL-
tRAL
A
VIHVILROW ADDRESS
tRCS /W VIHVILVIHVILtRAC
OPEN
tRRH tAA tOEA tCAC tCLZ
tRCH
tOFF tOEZ
/OE
DQ0-DQ3(7) VOHVOL-
DATA-OUT
TIMING WAVEFORM OF WRITE CYCLE (EARLY WRITE) NOTE : Dout = Open
tRC tRAS tCRP tRCD tRAD tASR tRAH tASC tCAH
COLUMN ADDRESS
/RAS
VIHVIL-
tRP
tCSH
tRSH tCAS tRAL
tCRP
/CAS
VIHVIL-
A
VIHVILROW ADDRESS
tCWL tRWL tWCS tWCH tWP
/W
VIHVILVIHVILtDS tDH
DATA-IN
/OE
DQ0-DQ3(7) VOHVOL-
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PACKAGING INFORMATION
HMD8M32M16
108.0 mm 3.38 mm R 1.57 mm 101.19 mm 3.18 mm DIA 0.51 mm
21.50 10.16 mm 6.35 mm
1
2.03 mm 1.02 mm 6.35 mm 95.25 mm 6.35 mm 1.27
72
3.34 mm
0.25 mm MAX
2.54 mm MIN
Gold : 1.040.10 mm 1.27 Solder:0.9140.10mm
1.29 0.08mm
ORDERING INFORMATION
Part Number
Density
Org.
Package
Vcc
SPEED
HMD8M32M16G-5 HMD8M32M16G-6
32MByte 32MByte
8MX 32bit 8MX 32bit
72 Pin-SIMM 72 Pin-SIMM
5.0V 5.0V
50ns 60ns
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